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PHP83N03LT; PHB83N03LT; PHE83N03LT
N-channel TrenchMOS transistor
Rev. 01 -- 23 January 2001 Product specification
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHP83N03LT in a SOT78 (TO-220AB) PHB83N03LT in a SOT404 (D2-PAK) PHE83N03LT in a SOT226 (I2-PAK).
2. Features
s Low on-state resistance s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
c c
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g)
mb mb
Simplified outline
Symbol
drain (d) source (s) mounting base, connected to drain (d)
[1]
d
g
2 1
MBK106
123
MBK112
MBB076
s
3
MBK116
123
SOT78 (TO-220AB)
[1] 1.
SOT404 (D2-PAK)
SOT226 (I2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Phillips Electronics.
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 C Tmb = 25 C; VGS = 5 V Tmb = 25 C VGS = 10 V; ID = 25 A; Tj = 25 C VGS = 5 V; ID = 25 A; Tj = 25 C Typ - - - - 6.5 10 Max 25 75 115 175 9 12 Unit V A W C m m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM EAS drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tmb = 25 C peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s non-repetitive avalanche energy unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 C unclamped inductive load; VDD = 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 C tp 50 s; pulsed; duty cycle 25%; Tj 150 C Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions Tj = 25 to 175 C Tj = 25 to 175 C; RGS = 20 k Min - - - - - - - - -55 -55 - - - Max 25 25 15 20 75 61 240 115 +175 +175 75 240 120 Unit V V V V A A A W C C A A mJ
Source-drain diode
Avalanche ruggedness
IAS
non-repetitive avalanche current
-
75
A
9397 750 07815
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
2 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
120 Pder 110 (%) 100 90 80 70 60
03ac97
03ad95
120 Ider (%) 100
80
60
50 40
40
30 20 10 0 0 20 40 60 80 100 120 140 160 180 Tmb (oC)
20
0 0 60 120 Tmb (C) 180
P tot P der = ---------------------- x 100% P
tot ( 25 C )
ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
103 ID (A) RDSon = VDS / ID
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
03ad86
tp = 10 s 102 100 s
1 ms 10
P
D.C.
=
tp T
10 ms 100 ms
tp T
t
1 1 10 VDS (V) 102
Tmb = 25 C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07815
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
3 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
7. Thermal characteristics
Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Figure 4 vertical in still air; SOT78 package vertical in still air; SOT226 package mounted on a printed circuit board; minimum footprint; SOT404 and SOT226 packages Value Unit 1.3 60 65 50 K/W K/W K/W K/W thermal resistance from junction to mounting base thermal resistance from junction to ambient Symbol Parameter
7.1 Transient thermal impedance
03ad85
10 Zth(j-sp) (K/W) 1 = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 single pulse 10-3 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
tp T t P tp T
=
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07815
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
4 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 25 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 5 V; VDS = 0 V VGS = 5 V; ID = 25 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VGS = 10 V; ID = 25 A Tj = 25 C Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 13 IS = 40 A; VGS = 0 V VDD = 15 V; ID = 1 A; VGS = 10 V; RG = 6 ; resistive load VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VDS = 25 V; ID = 30 A; Figure 11 ID = 30 A; VDD = 15 V; VGS = 5 V; Figure 14 - - - - - - - - - - - - - 55 33 7 12.5 590 380 9 14 75 60 0.9 0.95 - - - - - - 20 30 95 80 1.2 - S nC nC nC pF pF pF ns ns ns ns V V - 6.5 9 m - - 10 17 12 20.5 m m - - - 0.05 - 10 10 500 100 A A nA 1 0.5 - 1.5 - - 2 - 2.3 V V V 25 22 - - - - V V Conditions Min Typ Max Unit
1660 -
Source-drain diode
9397 750 07815
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
5 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
03ad87
03ad89
75 ID (A) 60 10 V 4.5 V 3.5 V Tj = 25 C
75 ID (A) 60 VDS > ID x RDSon
45 3V 30
45
30
15 VGS = 2.5 V 0 0 0.4 0.8 1.2 1.6 VDS (V) 2
15
175 C
Tj = 25 C
0 0 1 2 3 VGS (V) 4
Tj = 25 C
Tj = 25 C and 175 C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
03ad88
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
03ad57
0.06 RDSon () 0.05
2 a 1.6
2.5 V
VGS = 3 V
Tj = 25 C
0.04
1.2
0.03 3.5 V
0.8
0.02
0.01
4.5 V 10 V
0.4
0 0 15 30 45 60 ID (A) 75
0 -60 0 60 120 Tj (C) 180
Tj = 25 C
R DSon a = --------------------------R DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 07815
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
6 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
2.5
V GS(th) (V) max
03aa33
10-1
ID (A) 10-2
03aa36
2
typ
1.5
min
10-3
min
typ
max
1
10-4
0.5
10-5
0 -60 -20 20 60 100 140 180 Tj (oC)
10-6
0 0.5 1 1.5 2 2.5
VGS (V)
3
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature.
03ad90
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
104 Ciss, Coss, Crss (pF) Ciss
03ad92
90 gfs (S) 75
VDS > ID x RDSon
60
Tj = 25 C
45 175 C 30
103
Coss
Crss
15
0 0 15 30 45 60 ID (A) 75
102 10-1 1 10 VDS (V) 102
Tj = 25 C and 175 C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 07815
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
7 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
03ad91
03ad93
75 IS (A) 60 VGS = 0 V
10 VGS ID = 30 A (V) Tj = 25 C 8
VDD = 5 V 10 V 15 V
45
6
30 175 C 15
4 Tj = 25 C 2
0 0 0.3 0.6 0.9 VSD (V) 1.2
0 0 20 40 60 QG (nC) 80
Tj = 25 C and 175 C; VGS = 0 V
ID = 30 A; VDD = 5 V, 10 V and 15 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 14. Gate-source voltage as a function of gate charge; typical values.
9397 750 07815
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
8 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E P
A A1 q
D1
mounting base
D
L2(1)
L1 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max. 3.0
(1)
P 3.8 3.6
q 3.0 2.7
Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB EIAJ SC-46 EUROPEAN PROJECTION ISSUE DATE 99-09-13 00-09-07
Fig 15. SOT78 (TO-220AB).
9397 750 07815 (c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
9 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped)
SOT404
A E A1 mounting base
D1
D
HD
2
Lp
1
3
b c Q
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.40 14.80 Q 2.60 2.20
OUTLINE VERSION SOT404
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-12-14 99-06-25
Fig 16. SOT404 (D2-PAK)
9397 750 07815 (c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
10 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
Plastic single-ended package; low-profile 3 lead TO-220AB
SOT226
A D1 E A1
mounting base D
L2 b1
L1 Q
L
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.40 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 9.65 8.65 D1 1.5 1.1 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max 3.0
(1)
Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT226 REFERENCES IEC JEDEC low-profile 3-lead TO-220AB EIAJ EUROPEAN PROJECTION ISSUE DATE 99-05-27 99-09-13
Fig 17. SOT226 (I2-PAK)
9397 750 07815 (c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
11 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
10. Revision history
Table 6: 01 Revision history CPCN Description Product specification; initial version
Rev Date 20010123
9397 750 07815
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
12 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
11. Data sheet status
Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Product specification
Production
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
9397 750 07815
(c) Philips Electronics N.V. 2001 All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
13 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
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Internet: http://www.semiconductors.philips.com
(SCA71)
9397 750 07815
(c) Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 -- 23 January 2001
14 of 15
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
(c) Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 January 2001 Document order number: 9397 750 07815

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